Application of a forward bias to a p-n junction :

When a forward bias is applied to a p-n junction, the p-side is connected to a positive voltage and the n-side to a negative voltage. This reduces the potential barrier across the junction, causing the depletion zone to narrow rather than widen. The electric field in the depletion zone decreases because the applied voltage opposes the built-in potential barrier. The number of donors on the n-side does not increase due to the forward bias; instead, the bias allows more electrons from the n-side to flow into the p-side and more holes from the p-side to flow into the n-side, increasing the current. The potential difference across the depletion zone decreases with forward bias, facilitating the flow of charge carriers across the junction.