The slope of the I _D vs. V _GS curve of an n-channel MOSFET in linear regime is 10⁻³ Ω⁻¹ at V _DS = 0.1 V. For the same device, neglecting channel le - General SHORT_ANSWER GATE EC 2014 Question Paper (16-Feb-2014) (Shift 1) | ExamTest.live

mediumSHORT_ANSWERGATE EC 2014 Question Paper (16-Feb-2014) (Shift 1)General

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The slope of the I_{D} vs. V_{GS} curve of an n-channel MOSFET in linear regime is 10⁻³ Ω⁻¹ at V_{D S} = 0.1 V. For the same device, neglecting channel length modulation, the slope of the I_{D} vs. V_{GS} curve (in A / V) under saturation regime is approximately ______

Correct Answer

Solution & Step-by-step Explanation

In the range: 0.06 - 0.08 Concept: Linear Region: I_{D S} = K_{n} [(V_{GS} - V_{t}) V_{D S} - \frac{V _{D S}^{2}}{2}] K_{n} = μ_{n} C_{o x} \times \frac{W}{L} Saturation Region: I_{D S} = \frac{K _{n}}{2} [V_{GS} - V_{t}]^{2} Calculation: Given \frac{\partial I _{D S}}{\partial V _{GS}} = 1 0^{- 3} Also, the MOSFET is operating In the linear region. V_{D S} = 0.1 V I_{D S} = μ_{n} C_{0} \times \frac{W}{L} [(V_{GS} - V_{t}) V_{D S} - \frac{V _{D S}^{2}}{2}] I_{D S} = K_{n} [(V_{GS} - V_{t}) V_{D S} - \frac{V _{D S}^{2}}{2}] \frac{\partial I _{D S}}{\partial V _{GS}} = K_{n} V_{D S} 10⁻³ = Kₙ (0.1) Kₙ = 10⁻² I_{D S} = \frac{K _{n}}{2} [V_{GS} - V_{t}]^{2} I_{D S} = \frac{K _{n}}{2} (V_{GS} - V_{t}) \frac{\partial I _{D S}}{\partial V _{GS}} = \frac{K _{n}}{2} Putting on the respective values, we get: = \frac{10 ^{- 2}}{2} = 0.0707 A / V

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The slope of the I_{D} vs. V_{GS} curve of an n-channel MOSFET in linear regime is 10⁻³ Ω⁻¹ at V_{D S} = 0.1 V. For the same device, neglecting channel length modulation, the slope of the I_{D} vs. V_{GS} curve (in A / V) under saturation regime is approximately ______