PYQs Based Test - 13 : Electronic Devices — Free Mock Test (GATE EC) | ExamTest.live

The doping concentrations on the p-side and n-side of a silicon diode are 1 \times 10¹⁶ cm⁻³ and 1 \times 10¹⁷ cm⁻³, respectively. The forward bias of 0.3 V is applied to the diode. At T = 300 K, the intrinsic carrier concentration of silicon nᵢ = 1.5 \times 10¹⁰ and \frac{k T}{q} = 26 mV . The electron concentration at the edge of the depletion region p-side is

The slope of the I_{D} vs. V_{GS} curve of an n-channel MOSFET in linear regime is 10⁻³ Ω⁻¹ at V_{D S} = 0.1 V. For the same device, neglecting channel length modulation, the slope of the I_{D} vs. V_{GS} curve (in A / V) under saturation regime is approximately ______

The quantum efficiency (η) and responsivity (R) at a wavelength λ (in μm) in a p-i-n photodetector are related by

PYQs Based Test - 13 : Electronic Devices