GATE EC 2010 Question Paper (14-Feb-2010) (Shift 1)

The silicon sample with the unit cross-sectional area shown below is in thermal equilibrium.



The following information is given: T = 300K, electronic charge = 1.6 ×10⁻¹⁹ C, thermal voltage = 26 mV and electron mobility = 1350 cm²/V-s

The silicon sample with the unit cross-sectional area shown below is in thermal equilibrium.



The following information is given: T = 300K, electronic charge = 1.6 ×10⁻¹⁹ C, thermal voltage = 26 mV and electron mobility = 1350 cm²/V-s

Consider a baseband binary PAM receiver shown below. The additive channel noise n(t) is white with power spectral density S${}_N$ (f) = N₀/2 = 10⁻²⁰ W/Hz. The low-pass filter is ideal with unity gain and cutoff frequency 1 MHz. Let Yₜ, represent the random variable y(t₁)

Yₜ = Nₛ if transmitted bit bₖ = 0

Y${}_K$ = a + Nₖ if transmitted bit bₖ = 1

where Nₖ represents the noise sample value. The noise sample has a probability density function, P${}_N$ (n) = 0.5αe (This has mean zero and variance 2/α²), Assume transmitted bits lo be equiprobable and threshold z is set to a/2 = 10⁻⁶ V

Consider a baseband binary PAM receiver shown below. The additive channel noise n(t) is white with power spectral density S${}_N$ (f) = N₀/2 = 10⁻²⁰ W/Hz. The low-pass filter is ideal with unity gain and cutoff frequency 1 MHz. Let Yₜ, represent the random variable y(t₁)

Yₜ = Nₛ if transmitted bit bₖ = 0

Y${}_K$ = a + Nₖ if transmitted bit bₖ = 1

where Nₖ represents the noise sample value. The noise sample has a probability density function, P${}_N$ (n) = 0.5αe (This has mean zero and variance 2/α²), Assume transmitted bits lo be equiprobable and threshold z is set to a/2 = 10⁻⁶ V