GATE EC 2014 Question Paper (15-Feb-2014) (Shift 1)

A 230 V RMS source supplies power to two loads connected is parallel. The final load draws 10 kW at 0.8 leading power factor & the second one draws 10 kVA at 0.8 lagging power factor. The complex power delivered by the source is

A periodic variable x is shown in the figure as a function of time. The root-mean-square (RMS) value of x is

In the circuit shown in the figure, the value of capacitor C (in mF) needed to have critically damped response i(t) is________.

A BJT is biased in forward active mode. Assume V${}_{BE}$ = 0.7 V, kT/q = 25 mV and the reverse saturation current Iₛ = 10⁻¹³ mA. The transconductance of the BJT (in mA/V) is ______

The doping concentrations on the p-side and n-side of a silicon diode are 1 × 10¹⁶ cm⁻³ and 1 × 10¹⁷ cm⁻³, respectively. The forward bias of 0.3 V is applied to the diode. At T = 300 K, the intrinsic carrier concentration of silicon nᵢ = 1.5 × 10¹⁰ and $\frac{kT}{q}=26mV$. The electron concentration at the edge of the depletion region p-side is