GATE EC 2014 Question Paper (16-Feb-2014) (Shift 1)

In the circuit shown in the figure, the value of node voltage 𝑉₂ is

In the circuit shown in the figure, the angular frequency ω (in rad/s), at which the Norton equivalent impedance as seen from terminals b-b' is purely resistive, is

For the Y-network shown in the figure, the value of R₁ (in Ω) in the equivalent Δ-network is ____.

The donor and accepter impurities in an abrupt junction silicon diode are 1 × 10¹⁶ cm⁻³ and 5 × 10¹⁸ cm⁻³, respectively. Assume that the intrinsic carrier concentration is silicon nᵢ = 1.5 × 10¹⁰ cm⁻³ at $300K,\frac{kT}{q}=26mV$ and the permittivity of silicon ϵₛᵢ = 1.04 × 10⁻¹² F/cm. The built-in potential and the depletion width of the diode under thermal equilibrium conditions, respectively, are

The slope of the I${}_D$ vs. V${}_{GS}$ curve of an n-channel MOSFET in linear regime is 10⁻³ Ω⁻¹ at V${}_{DS}$ = 0.1 V. For the same device, neglecting channel length modulation, the slope of the $\sqrt{I_D}$ vs. V${}_{GS}$ curve (in $\sqrt{A}/V$) under saturation regime is approximately ______