GATE EC 2014 Question Paper (16-Feb-2014) (Shift 1)

An ideal MOS capacitor has a boron doping-concentration of 10¹⁵ cm⁻³ in the substrate. When a gate voltage is applied, a depletion region of width 0.5 μm is formed with a surface (channel) potential of 0.2 V. Given that ε₀ = 8.854 × 10⁻¹⁴ F/cm and the relative permittivities of silicon and silicon dioxide are 12 and 4, respectively, the peak electric field (in V/μm) in the oxide region is _____________.

In the circuit shown, the silicon BJT has β = 50. Assume V${}_{BE}$ = 0.7 V and V${}_{CE(sat)}$ = 0.2 V. Which one of the following statements is correct?

Assuming that the Op-amp in the circuit shown is ideal, Vₒ is given by

For the MOSFET M₁ shown in the figure, assume W/L = 2, V${}_{DD}$ = 2.0 V, 𝜇${}_{\text{n}}$ 𝐶${}_{\text{o}x}$ =100 μA/V² and V${}_{TH}$ = 0.5 V. The transistor M₁ switches from saturation region to linear region when Vᵢₙ (in Volts) is__________.

If WL is the Word Line and BL the Bit Line, an SRAM cell is shown in