GATE EC 2014 Question Paper (16-Feb-2014) (Shift 2)

In the circuit shown in the figure, the value of v₀(t) (in Volts) for t → ∞ is ______

The equivalent resistance in the infinite ladder network shown in the figure is R${}_C$.

The value of R${}_C$ / R is ________

For the two-port network shown in the figure, the impedance (Z) matrix (in Ω ) is

Consider a silicon sample doped with ${\mathrm{N}}_{\mathrm{D}}=1\times 10^{15}/c{\mathrm{m}}^3$ donor atoms. Assume that the intrinsic carrier concentration ${\mathrm{n}}_{\mathrm{i}}=1.5\times 10^{10}/c{\mathrm{m}}^3$. If the sample is additionally doped with ${\mathrm{N}}_{\mathrm{A}}=1\times 10^{18}/c{\mathrm{m}}^3$ acceptor atoms, the approximate number of $electrons/c{\mathrm{m}}^3$ in the sample, at $\mathrm{T}=300\mathrm{K}$, will be ______.

Consider two BJTs biased at the same collector current with area A₁ = 0.2 μm × 0.2 μm and A₂ = 300 μm × 300 μm. Assuming that all other device parameters are identical, kT/q = 26 mV, the intrinsic carrier concentration is 1 × 10¹⁰ cm⁻³, and q = 1.6 × 10⁻¹⁹ C, the difference between the base-emitter voltages (in mV) of the two BJTs (i.e., V${}_{BE1}$ – V${}_{BE2}$) is _____.