GATE EC 2017 Question Paper (05-Feb-2017) (Shift 2)

Consider an n-channel MOSFET having width W, length L, electron mobility in the channel μₙ and oxide capacitance per unit area Cₒₓ. If gate-to-source voltage V${}_{GS}$ = 0.7 V, drain-to-source voltage V${}_{DS}$ = 0.1 V, (μₙCₒₓ) = 100 μA/V², threshold voltage V${}_{TH}$ = 0.3 V and (W/L) = 50, then the transconductance g${}_m$ (in mA/V) is ____________

The output V₀ of the diode circuit shown in the figure is connected to an averaging DC voltmeter. The reading on the DC voltmeter in Volts, neglecting the voltage drop across the diode, is _________.

In the figure, D1 is a real silicon p-n junction diode with a drop of 0.7 V under forward bias condition and D2 is a Zener diode with breakdown voltage of -6.8 V. The input Vᵢₙ(t) is a periodic square wave of period T, whose one period is shown in the figure.



Assuming 10τ ≪ T, where τ is the time constant of the circuit, the maximum and minimum values of the output waveform are respectively,

Consider the circuit shown in the figure. Assume base-to-emitter voltage V${}_{BE}$ = 0.8 V and common-base current gain (α) of the transistor is unity.



The value of the collector-to-emitter voltage V${}_{CE}$ (in volt) is __________

For the circuit shown in the figure, P and Q are the inputs and Y is the output.



The logic implemented by the circuit is