GATE EC 2019 Question Paper (09-Feb-2019) (Shift 1)

A rectangular waveguide of width w and height h has cut-off frequencies for TE₁₀and TE₁₁ modes in the ratio 1 : 2. The aspect ratio w/h, rounded off to two decimal places, is __________.

In the circuit shown, Vs is a 10 V square wave of period, T = 4 ms with R = 500 Ω and C = 10 μF. The capacitor is initially uncharged at t = 0, and the diode is assumed to be ideal. The voltage across the capacitor (V${}_c$) at 3 ms is equal to ____ volts (rounded off to one decimal place).

A CMOS inverter, designed to have a mid-point voltage V${}_I$ equal to half of V${}_{dd}$, as shown in the figure, has the following parameters:

$V_{dd}=3V$

${\mu }_n{C}_{oc}=\frac{100\mu A}{A^2};V_{tn}=0.7VfornMOS$

${\mu }_p{C}_{ox}=\frac{40\mu A}{V^2};\left|V_{tp}\right|=0.9VforpMOS$

The ratio of ${\left(\frac{W}{L}\right)}_{n}to{\left(\frac{W}{L}\right)}_p$ is equal to ________ (rounded of 3 decimal places.)

In the circuit shown, the threshold voltages of the pMOS (|Vₜₚ|) and nMOS (Vₜₙ) transistors are both equal to 1 V. All the transistors have the same output resistance r${}_{ds}$ of 6 MΩ. The other parameters are listed below:

${\mu }_n{C}_{ox}=60\frac{\mu A}{V^2};{\left(\frac{W}{L}\right)}_{NMOS}=5$

${\mu }_P{C}_{ox}=30\frac{\mu A}{V^2};{\left(\frac{W}{L}\right)}_{PMOS}=10$

μₙand μₚ are the carrier mobilities, and Cox is the oxide capacitance per unit area. Ignoring the effect of channel length modulation and body bias, the magnitude of the gain of the circuit is ____ (rounded off to 1 decimal place).

In the circuit shown, V₁ = 0 and V₂ = V${}_{dd}$. The other relevant parameters are mentioned in the figure. Ignoring the effect of channel length modulation and the body effect, the value of Iₒᵤₜ is _____mA (rounded off to 1 decimal place).