GATE EC 2020 Question Paper (02-Feb-2020) (Shift 2)

A single crystal intrinsic semiconductor is at a temperature of 300 K with an effective density of states for holes twice that of electrons. The thermal voltage is 26 mV. The intrinsic Fermi level is shifted from the mid-bandgap energy level by

Consider the recombination process via bulk traps in a forward-biased pn homojunction diode. The maximum recombination rate is U${}_{max}$. If the electron and the hole capture cross-sections are equal, which one of the following is FALSE?

The components in the circuit shown below are ideal. If the op-amp is in positive feedback and the input voltage Vᵢ is a sine wave of amplitude 1 V, the output voltage V₀ is

In the circuit shown below, the Thevenin voltage V${}_{TH}$ is

The figure below shows a multiplexer where S₁ and S₀ are the select lines, I₀ to I₃ are the input data lines, EN is the enable line, and F(P, Q, R) is the output. F is