PYQs Based test 22: Power Electronics

For the power semiconductor devices IGBT, MOSFET, Diode and Thyristor, which one of the following statements is TRUE?

In the Inverter circuit shown below, the switches are controlled such that the load voltage v₀(t) is a 400 Hz square wave.



The RMS value of the fundamental component of v₀(t) in volts is _________.

A double pulse measurement for an inductively loaded circuit controlled by the IGBT switch is carried out to evaluate the reverse recovery characteristics of the diode, D, represented approximately as a piecewise linear plot of current vs time at diode turn-off. Lₚₐᵣ is a parasitic inductance due to the wiring of the circuit, and is in series with the diode. The point on the plot (indicate your choice by entering 1, 2, 3 or 4) at which the IGBT experiences the highest current stress is _____

A single phase fully controlled rectifier is supplying a load with an anti-parallel diode as shown in the figure. All switches and diodes are ideal. Which one of the following is true for instantaneous load voltage and current?

Four power semiconductor devices are shown in the figure along with their relevant terminals. The device(s) that can carry dc current continuously in the direction shown when gated appropriately is (are)