GATE EC 2010 Question Paper (14-Feb-2010) (Shift 1)

At room temperature a possible value for the mobility of electrons in the inversion layer of a silicon n-channel MOSFET is:

Thin gate oxide in a CMOS process is preferably grown using

In the silicon BJT circuit shown below, assume that the emitter area of transistor Q₁ is half that of transistor Q₂.



The value of current I₀ is approximately

The amplifier circuit shown below uses a silicon transistor. The capacitors C${}_c$ ard C${}_E$ can be assumed to be short at the signal frequency and the effect of output resistance r₀, can be ignored. If C${}_E$ is disconnected from the circuit, which one of the following statements is TRUE?

Assuming the OP-AMP to be ideal. the voltage gain of the amplifier shown below is