GATE EC 2015 Question Paper (01-Feb-2015) (Shift 1)

The ABCD parameters of the following 2-port network are

A network is described by the state model as

${\dot{x}}_1=2x_1-x_2+3u$

${\dot{x}}_2=-4x_2-u$

$y=3x_1-2x_2$

The transfer function H(s) $\left(=\frac{Y\left(s\right)}{U\left(s\right)}\right)$ is

The electric field profile in the depletion region of a p-n junction in equilibrium is shown in the figure. Which one of the following statements is NOT TRUE?

The current in an enhancement mode NMOS transistor biased in saturation mode was measured to be 1 mA at a drain-source voltage of 5 V. When the drain-source voltage was increased to 6 V while keeping gate-source voltage same, the drain current increased to 1.02 mA. Assume that drain to source saturation voltage is much smaller than the applied drain-source voltage. The channel length modulation parameter λ (in V⁻¹) is _______.

An npn BJT having reverse saturation current I${}_S$ = 10⁻¹⁵ A is biased in the forward active region with V${}_{BE}$ = 700 mV. The thermal voltage (V${}_T$) is 25 mV and the current gain (β) may vary from 50 to 150 due to manufacturing variations. The maximum emitter current (in µA) is _______.