GATE EC 2015 Question Paper (31-Jan-2015) (Shift 2)

The voltage (V${}_C$) across the capacitor (in Volts) in the network shown is ______

In the circuit shown the average value of the voltage V${}_{ab}$ (in volts) in steady state condition is _____________.

The 2-port admittance matrix of the circuit shown is given by

An n-type silicon sample is uniformly illuminated with light which generates 10²⁰ electron-hole pairs per cm³ per second. The minority carrier lifetime in the sample is 1μs in the steady state, the hole concentration in the sample is approximately 10${}^x$, where x is an integer. The value of x is

A piece of silicon is doped uniformly with phosphorus with a doping concentration of 10¹⁶ /cm³ The expected value of mobility versus doping concentration for silicon full dopant ionization is shown below. The Charge of an electron is 1.6 × 10⁻¹⁹ C. The conductivity (in S cm⁻¹) of the silicon sample at 300 K is_________