GATE EC 2016 Question Paper (30-Jan-2016) (Shift 1)

A small percentage of impurity is added to an intrinsic semiconductor at 300 K. Which one of the following statements is true for the energy band diagram shown in the following figure?

Consider the following statements for a metal oxide semiconductor field-effect transistor

(MOSFET):

P: As channel length reduces, OFF-state current increases.

Q: As channel length reduces, output resistance increases.

R: As channel length reduces, threshold voltage remains constant.

S: As channel length reduces, ON current increases.

Which of the above statements is INCORRECT?

Consider the constant current source shown in the figure below. Let 𝛽 represent the current gain of the transistor.



The load current 𝐼₀ through R${}_L$ is

The following signal Vᵢ of peak voltage 8 V is applied to the non-inverting terminal of an ideal opamp. The transistor has V${}_{BE}$ = 0.7 V, β = 100; V${}_{LED}$ = 1.5 V, V${}_{CC}$ = 10 V and −V${}_{CC}$ = −10 V.



The number of times the LED glows is ________

Consider the oscillator circuit shown in the figure. The function of the network (shown in dotted lines) consisting of the 100 kΩ resistor in series with the two diodes connected back-to-back is to: