PYQs Based Test - 13 : Electronic Devices

Consider two energy levels: E₁, E eV above the Fermi Level and E₂, E eV below the Fermi Level. P₁ and P₂ are respectively the probabilities of E₁ being occupied by an electron and E₂ being empty. Then

A p-n step junction diode with a contact potential of 0.65 V has a depletion width of 1 μm at equilibrium. The forward voltage (in volts, correct to two decimal places) at which this width reduces to 0.6 μm is ________.

The figure shows the high-frequency C-V curve of a MOS capacitor (at T = 300 K) with ϕ ${}_{ms}$ = 0 V and no oxide charges. The flat-band, inversion, and accumulation conditions are represented, respectively, by the points

Red (R), Green (G) and Blue (B) Light Emitting Diodes (LEDs) were fabricated using p-n junctions of three different inorganic semiconductors having different band-gaps. The built-in voltages of red, green and blue diodes are V${}_R$, V${}_G$ and V${}_B$, respectively. Assume donor and acceptor doping to be the same (N${}_A$ and N${}_D$, respectively) in the p and n sides of all the three diodes.

Which one of the following relationships about the built-in voltages is TRUE?

A small percentage of impurity is added to an intrinsic semiconductor at 300 K. Which one of the following statements is true for the energy band diagram shown in the following figure?