PYQs Based Test - 13 : Electronic Devices

If the base width in a bipolar junction transistor is doubled, which one of the following statements will be TRUE?

Consider the circuit shown with an ideal long channel nMOSFET (enhancement-mode, the substrate is connected to the source). The transistor is appropriately biased in the saturation region with V${}_{GG}$ and V${}_{DD}$ such that it acts as a linear amplifier. vᵢ is the small-signal ac input voltage. v${}_A$ and v${}_B$ represent the small-signal voltages at nodes A and B, respectively. The value of $\frac{v_A}{v_B}$,is ________ (rounded off to one decimal place).

Select the CORRECT statement(s) regarding semiconductor devices.

An ideal MOS capacitor (p-type semiconductor) is shown in the figure. The MOS capacitor is under strong inversion with V${}_G$ = 2 V. The corresponding inversion charge density (Q${}_{iN}$) is 2.2 μC/cm². Assume oxide capacitance per unit area as C${}_{OX}$ = 1.7 μF/cm². For V${}_G$ = 4 V, the value of Q${}_{IN}$ is _______μC/cm². (rounded off to one decimal place).

In a non-degenerate bulk semiconductor with electron density n = 10¹⁶ cm⁻³ , the value of E${}_C$ - E${}_{Fn}$ = 200 meV, where E${}_C$ and E${}_{Fn}$ denote the bottom of the conduction band energy and electron Fermi level energy, respectively. Assume thermal voltage as 26 meV and the intrinsic carrier concentration is 10¹⁰ cm⁻³ . For n = 0.5 × 10¹⁶ cm⁻³ , the closest approximation of the value of (E${}_C$ − E${}_{Fn}$), among the given options, is __________.