PYQs Based Test - 13 : Electronic Devices

The electric field profile in the depletion region of a p-n junction in equilibrium is shown in the figure. Which one of the following statements is NOT TRUE?

A Germanium sample of dimensions 1 cm × 1 cm is illuminated with a 20 mW, 600 nm laser light source as shown in the figure. The illuminated sample surface has a 100 nm of loss-less Silicon dioxide layer that reflects one-fourth of the incident light. From the remaining light, one-third of the power is reflected from the Silicon dioxide-Germanium interface, one-third is absorbed in the Germanium layer, and one-third is transmitted through the other side of the sample. If the absorption coefficient of Germanium at 600 nm is 3 × 10⁴cm⁻¹ and the bandgap is 0.66 eV, the thickness of the Germanium layer, rounded off to 3 decimal places, is ______ μm.

In the figure, $\ln ({\mathrm{r}}_{\mathrm{i}})$ is plotted as a function of $1/T$, where ${\mathrm{r}}_{\mathrm{i}}$ is the intrinsic resistivity of silicon, $\mathrm{T}$ is the temperature, and the plot is almost linear



The slope of the line can be used to estimate

For a narrow base PNP BJT, the excess minority carrier concentrations (Δn${}_E$ for emitter, Δp${}_B$ for base, Δn${}_C$ for collector) normalized to equilibrium minority carrier concentrations (n${}_{E0}$ for emitter, p${}_{B0}$ for base, n${}_{C0}$ for collector) in the quasi-neutral emitter, base and collector regions are shown below. Which one of the following biasing modes is the transistor operating in?

Which one of the following options describes correctly the equilibrium band diagram at T = 300 K of a Silicon p n n ⁺p⁺⁺ configuration shown in the figure?